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Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe sub(3)Si/FeSi sub(2) artificial lattices
Current-perpendicular-to-plane (CPP) junctions of Fe sub(3)Si/FeSi sub(2) were fabricated from Fe sub(3)Si/FeSi sub(2) artificial lattice films, which were prepared by facing-target direct-current sputtering, by employing a focused ion beam (FIB) technique. CPP structurization was confirmed by scann...
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Published in: | Japanese Journal of Applied Physics 2014-01, Vol.53 (2S), p.02BC15-1-02BC15-5 |
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container_end_page | 1-02BC15-5 |
container_issue | 2S |
container_start_page | 02BC15 |
container_title | Japanese Journal of Applied Physics |
container_volume | 53 |
creator | Sakai, Ken-ichiro Noda, Yuta Daio, Takeshi Tsumagari, Daiki Tominaga, Aki Takeda, Kaoru Yoshitake, Tsuyoshi |
description | Current-perpendicular-to-plane (CPP) junctions of Fe sub(3)Si/FeSi sub(2) were fabricated from Fe sub(3)Si/FeSi sub(2) artificial lattice films, which were prepared by facing-target direct-current sputtering, by employing a focused ion beam (FIB) technique. CPP structurization was confirmed by scanning electron microscopy. The CPP junctions, in which antiferromagnetic interlayer coupling is induced between the Fe sub(3)Si layers, exhibited a clear hysteresis loop in the electrical resistance for current injection, which is probably due to current-induced magnetization switching. The critical current density for it is approximately 3.3 x 10 super(1)A/cm super(2), which is at least four orders smaller than the values that have ever been reported. |
doi_str_mv | 10.7567/JJAP.53.02BC15 |
format | article |
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CPP structurization was confirmed by scanning electron microscopy. The CPP junctions, in which antiferromagnetic interlayer coupling is induced between the Fe sub(3)Si layers, exhibited a clear hysteresis loop in the electrical resistance for current injection, which is probably due to current-induced magnetization switching. 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CPP structurization was confirmed by scanning electron microscopy. The CPP junctions, in which antiferromagnetic interlayer coupling is induced between the Fe sub(3)Si layers, exhibited a clear hysteresis loop in the electrical resistance for current injection, which is probably due to current-induced magnetization switching. The critical current density for it is approximately 3.3 x 10 super(1)A/cm super(2), which is at least four orders smaller than the values that have ever been reported.</abstract><doi>10.7567/JJAP.53.02BC15</doi></addata></record> |
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source | Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
subjects | Density Disilicides Intermetallics Iron compounds Lattices Magnetization Semiconductors Silicides Switching |
title | Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe sub(3)Si/FeSi sub(2) artificial lattices |
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