Characterization of an oxide semiconductor prepared by microwave sintering

We fabricated a thin-film transistor (TFT) using amorphous indium gallium zinc oxide (a-IGZO), which was formed through annealing of an IGZO precursor film with a single-mode cavity microwave at 2.45 GHz. The transisitor fabricated with the a-IGZO film prepared by microwave annealing for 15 min show...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-05, Vol.53 (5S3), p.5-1-05HA12-4
Main Authors: Cheong, Hea Jeong, Fukuda, Nobuko, Sakai, Heisuke, Ogura, Shintaro, Takeuchi, Kazuhiko, Nagahata, Ritsuko, Uemura, Sei
Format: Article
Language:English
Subjects:
Annealing
Devices
Holes
Microwaves
Ovens
Oxides
Semiconductor devices
Semiconductors
Thin film transistors
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Summary:We fabricated a thin-film transistor (TFT) using amorphous indium gallium zinc oxide (a-IGZO), which was formed through annealing of an IGZO precursor film with a single-mode cavity microwave at 2.45 GHz. The transisitor fabricated with the a-IGZO film prepared by microwave annealing for 15 min showed higher device performance, i.e., a field effect mobility of 5.75 × 10−2 cm2·V−1·s−1, an on/off ratio of 106, and a threshold voltage of 20 V, than that prepared by annealing with a conventional oven for 120 min. The Raman spectra confirm that the device improvement originates from the decrease in the number of -OH groups and removal of organic species for 15 min by microwave annealing. These results suggest that the microwave annealing method has an advantage as the annealing process of solution-processed oxide semiconductors to reduce the process time. It can be applied to the fabrication of TFTs.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.05HA12