Study of plasma immersion ion implantation into silicon substrate using magnetic mirror geometry

• Published in: Applied surface science 2012-10, Vol.258 (24), p.9564-9569
• Main Authors: Pillaca, E.J.D.M., Ueda, M., Kostov, K.G., Reuther, H.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crossed E × B fields; Drift; Electric potential; Exact sciences and technology; Immersion; Implantation; Ion implantation; Magnetic fields; Magnetic mirror geometry; Physics; Plasma immersion ion implantation with magnetic field; Silicon; Silicon substrates; Surface properties; Wettability
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2012.05.132

► Plasma density increases in magnetic bottle configuration due to magnetized electrons drifting in crossed E×B fields, promoting electronneutral collision and as a result, the ion current density increases. ► Plasma immersion ion implantation in crossed E×B fields provides significant changes in surface properties of the samples. ► The plasma immersion ion implantation process with magnetic field has increased the dose and the depth of implantation by a factor of 1.5 in the case of sample implanted at high energy. The effect of magnetic field enhanced plasma immersion ion implantation (PIII) in silicon substrate has been investigated at low and high pulsed bias voltages. The magnetic field in magnetic bottle configuration was generated by two magnetic coils installed outside the vacuum chamber. The presence of both, electric and magnetic field in PIII creates a system of crossed E×B fields, promoting plasma rotation around the target. The magnetized electrons drifting in crossed E×B fields provide electron-neutral collision. Consequently, the efficient background gas ionization augments the plasma density around the target where a magnetic confinement is achieved. As a result, the ion current density increases, promoting changes in the samples surface properties, especially in the surface roughness and wettability and also an increase of implantation dose and depth.