Binary and complex oxide thin films for microelectronic applications: An insight into their growth and advanced nanoscopic investigation

Innovative dielectric materials are of increasing interest in several microelectronic devices. Here, an overview of different MOCVD approaches to fabricate binary and complex oxide thin films with dielectric properties is presented. The growth of three types of oxide thin films, namely Pr2O3, NiO an...

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Bibliographic Details
Published in:Surface & coatings technology 2013-09, Vol.230, p.152-162
Main Authors: Lo Nigro, Raffaella, Fiorenza, Patrick, Catalano, Maria R., Fisichella, Gabriele, Roccaforte, Fabrizio, Malandrino, Graziella
Format: Article
Language:English
Subjects:
APPLICATIONS
Calcium copper titanate
Cross-disciplinary physics: materials science
rheology
CRYSTAL GROWTH
DEPOSITION
Dielectric properties
Dielectrics
EPITAXY
Exact sciences and technology
Heterogeneity
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microelectronics
MICROSTRUCTURES
MOCVD precursors
Nanoelectrical investigation
Nanostructure
Nickel oxide
OXIDES
Partial pressure
Physics
Praseodymium oxides
Precursors
PRESSURE
PROPERTIES
Surface treatments
THIN FILMS
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Summary:Innovative dielectric materials are of increasing interest in several microelectronic devices. Here, an overview of different MOCVD approaches to fabricate binary and complex oxide thin films with dielectric properties is presented. The growth of three types of oxide thin films, namely Pr2O3, NiO and CaCu3Ti4O12, has been discussed. In particular the growth of Pr2O3 films has been optimized on (001) Si substrates for CMOS applications. In this case, because of the wide numbers of possible Pr-oxide phases, an accurate control of oxygen partial pressure was mandatory. NiO thin films have been grown on (0001)SiC and (0001)AlGaN/GaN wide bandgap semiconductors. The appropriate conditions for the epitaxial growth have been found in order to improve the quality of the interface. Finally, complex oxide CaCu3Ti4O12 thin films have been grown on single crystal perovskite substrates as well as on technological electrodes to be applied in wireless and Rf circuits. An appealing approach based on the use of a multicomponent precursor source has been optimized and both epitaxial and polycrystalline films have been deposited. In all cases, special emphasis has been placed upon the importance of suitable precursors, deposition parameters and interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics by scanning probe microscopy with conductive tips, which has been used to image defects inside the grains or heterogeneities at the grain boundaries. •Dielectric growth and characterization are very hot topics for microelectronics.•Pr2O3 thin films are promising dielectric for CMOS devices.•NiO thin films can be good dielectric for MOSFET in GaN and SiC.•CaCu3Ti4O12 perovskite demonstrated to possess giant dielectric constant•Comprehensive insights of all the MOCVD processes have been performed.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2013.06.069