Low-Power and High-Reliability Gadolinium Oxide Resistive Switching Memory with Remote Ammonia Plasma Treatment

The effects of remote NH 3 plasma treatment on a Pt/Gd x O y /W resistive random access memory (RRAM) metal--insulator--metal (MIM) structure were investigated. We found that a decrease in the electron barrier height caused by nitrogen incorporation at the Pt--Gd x O y interface can help reduce the...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-04, Vol.52 (4), p.04CD07-04CD07-4
Main Authors: Wang, Jer-Chyi, Ye, Yu-Ren, Syu, Jhih-Sian, Wu, Pin-Ru, Wu, Chih-I, Wang, Po-Sheng, Chang, Jung Hung
Format: Article
Language:English
Subjects:
Crystal defects
Damage
Durability
Electric potential
Endurance
Grain boundaries
Nitrogen atoms
Plasma (physics)
Platinum
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Summary:The effects of remote NH 3 plasma treatment on a Pt/Gd x O y /W resistive random access memory (RRAM) metal--insulator--metal (MIM) structure were investigated. We found that a decrease in the electron barrier height caused by nitrogen incorporation at the Pt--Gd x O y interface can help reduce the operational set and reset voltages. Nitrogen atoms from the NH 3 plasma prevent oxygen atoms in the film from diffusing through Pt grain boundaries into the atmosphere, resulting in superior retention properties (${>}10^{4}$ s). The stability of the endurance behavior of Gd x O y RRAMs was significantly improved owing to the passivation of defects in Gd x O y films by nitrogen and hydrogen atoms from the remote NH 3 plasma, markedly reducing plasma damage.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.04CD07