Scaling of Coplanar Homojunction Amorphous In--Ga--Zn--O Thin-Film Transistors

Channel length ($L$) and width ($W$) scaling of amorphous In--Ga--Zn--O (a-IGZO) thin-film transistors (TFTs) have been investigated by coplanar homojunction a-IGZO TFTs. The fabricated TFTs have a mobility around 12 cm 2 V -1 s -1 , sub-threshold slope ($S$) of ${\sim}110$ mV/decade, threshold volt...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-03, Vol.52 (3), p.03BB05-03BB05-5
Main Authors: Baek, Gwanghyeon, Abe, Katsumi, Kumomi, Hideya, Kanicki, Jerzy
Format: Article
Language:English
Subjects:
Channels
Homojunctions
Semiconductor devices
Slopes
Switching
Thin film transistors
Threshold voltage
Transistors
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Summary:Channel length ($L$) and width ($W$) scaling of amorphous In--Ga--Zn--O (a-IGZO) thin-film transistors (TFTs) have been investigated by coplanar homojunction a-IGZO TFTs. The fabricated TFTs have a mobility around 12 cm 2 V -1 s -1 , sub-threshold slope ($S$) of ${\sim}110$ mV/decade, threshold voltage around 0.3 V and off-current below $10^{-13}$ A. The TFTs with $L > 5$ μm have the reduced transconducance ($g_{\text{m}}$) at lower $V_{\text{GS}}$, however, the short $L < 5$ μm TFTs have the $g_{\text{m}}$ reduction at higher $V_{\text{GS}}$. Even though the TFTs with smaller channel length ($L \leq 5$ μm) show proper switching characteristics, threshold voltage lowering and sub-threshold slope degradation are clearly observed.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.03BB05