Double-Crystalline Silicon Channel Thin Film Transistors Fabricated Using Continuous-Wave Green Laser for Large Organic Light-Emitting Diode Displays

We developed double-crystalline silicon channel thin film transistors (TFTs) whose active region consisted of a polysilicon layer and a microcrystalline silicon layer. The polysilicon layer was formed by continuous-wave green laser annealing with scalability to large substrates. The microcrystalline...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-03, Vol.52 (3), p.03BB02-03BB02-7
Main Authors: Hayashi, Hiroshi, Kanegae, Arinobu, Nishida, Kenichirou, Kawashima, Takahiro, Saitoh, Tohru, Komori, Kazunori
Format: Article
Language:English
Subjects:
Channels
Displays
Etching
Lasers
Organic light-emitting diodes
Semiconductor devices
Silicon
Silicon substrates
Thin film transistors
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Summary:We developed double-crystalline silicon channel thin film transistors (TFTs) whose active region consisted of a polysilicon layer and a microcrystalline silicon layer. The polysilicon layer was formed by continuous-wave green laser annealing with scalability to large substrates. The microcrystalline silicon layer formed on the polysilicon layer provides a sufficient channel etching margin for the fabrication of TFTs on large substrates without degradation of TFT mobility. The kink-free output characteristics were realized by a band-gap engineering method using a microcrystalline silicon layer. The TFT characteristics desirable for organic light-emitting diode display applications, namely, high mobility, high reliability, and kink-free output characteristics, have been successfully demonstrated.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.03BB02