Effect of Stress Mitigating Layers on the Structural Properties of GaN Grown by Ammonia Molecular Beam Epitaxy on 100 mm Si(111)

The effect of AlGaN and AlN/GaN stress mitigating layers (SMLs) on the structural and morphological properties of GaN grown by ammonia molecular beam epitaxy (MBE) on 100 mm Si(111) has been studied. GaN grown on both AlGaN and AlN/GaN SMLs showed two-dimensional (2D) growth mode whereas the growth...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-08, Vol.52 (8), p.08JE05-08JE05-4
Main Authors: Ravikiran, Lingaparthi, Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum nitride
Ammonia
Density
Gallium nitrides
Molecular beam epitaxy
Stresses
Three dimensional
Two dimensional
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Summary:The effect of AlGaN and AlN/GaN stress mitigating layers (SMLs) on the structural and morphological properties of GaN grown by ammonia molecular beam epitaxy (MBE) on 100 mm Si(111) has been studied. GaN grown on both AlGaN and AlN/GaN SMLs showed two-dimensional (2D) growth mode whereas the growth mode was three-dimensional (3D) for the GaN grown without the use of any SML. GaN on AlN/GaN SML showed lesser pit density on the surface, higher residual compressive strain and lower dislocation density compared to the GaN grown on AlGaN SML. Further enhancement in surface morphology with pit-free surface and reduced surface roughness was obtained by increasing the GaN growth rate from 0.22 to 0.70 μm/h in AlN/GaN SML structure.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.08JE05