Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs

As a thermal sensing and protection module on a GaN smart power IC platform, the first GaN over-temperature protection (OTP) circuit is demonstrated to deliver a desirable triggering signal at the critical temperature. The integrated OTP circuit is realized based on monolithic integration of enhance...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-08, Vol.52 (8), p.08JN15-08JN15-4
Main Authors: Kwan, Alex Man Ho, Guan, Yue, Liu, Xiaosen, Chen, Kevin J
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Circuits
Detection
Devices
Gallium nitrides
High electron mobility transistors
Noise levels
Rejection
Semiconductor devices
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Summary:As a thermal sensing and protection module on a GaN smart power IC platform, the first GaN over-temperature protection (OTP) circuit is demonstrated to deliver a desirable triggering signal at the critical temperature. The integrated OTP circuit is realized based on monolithic integration of enhancement-/depletion-mode high electron mobility transistors (HEMT) and HEMT-compatible lateral field effect rectifiers on a baseline AlGaN/GaN-on-Si wafer. The circuit effectively indicates the over-temperature up to 250 °C, and has a power supply rejection radio well above 35 dB. This sensing/protection circuit is expected to provide enhanced reliability to the high-voltage GaN power devices.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.08JN15