Determination of non-uniform graphene thickness on SiC (0001) by X-ray diffraction

•We investigated thickness of epitaxial graphene films on Si-terminated SiC by X-ray diffraction (XRD).•The present method can give us the accurate thickness distribution for non-uniform graphene layers which cover the substrate.•The results from XRD are confirmed by angle-resolved photoemission spe...

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Bibliographic Details
Published in:Applied surface science 2013-10, Vol.282, p.297-301
Main Authors: Ruammaitree, A., Nakahara, H., Akimoto, K., Soda, K., Saito, Y.
Format: Article
Language:English
Subjects:
Angle-resolved photoemission spectroscopy
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Diffraction
Electric potential
Epitaxial graphene
Epitaxial growth
Exact sciences and technology
Graphene
Mathematical analysis
Physics
SiC
Silicon carbide
Voltage
X-ray diffraction
X-rays
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Summary:•We investigated thickness of epitaxial graphene films on Si-terminated SiC by X-ray diffraction (XRD).•The present method can give us the accurate thickness distribution for non-uniform graphene layers which cover the substrate.•The results from XRD are confirmed by angle-resolved photoemission spectroscopy and ultra-high vacuum scanning electron microscope (UHV-SEM). Epitaxial graphene thickness distribution grown on Si-terminated SiC (0001) surface was analyzed by using an X-ray diffraction (XRD) pattern and a simple equation. These results were confirmed by low accelerating voltage scanning electron microscopy and angle resolved photoemission spectroscopy. Despite its simplicity, proposed XRD analysis provides fairly accurate information on layer spacing and thickness distribution of graphene layers. It is expected that this method is useful for quick evaluation of graphene layer numbers on large scale substrate.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2013.05.122