A Programmable Difference-of-Gaussian Analog Complementary Metal Oxide Semiconductor Image Sensor Operating in the Subthreshold Regime

• Published in: Japanese Journal of Applied Physics 2013-04, Vol.52 (4), p.04CE13-04CE13-8
• Main Authors: Wang, Zheye, Shibata, Tadashi
• Format: Article
• Language: English
• Subjects: Cancellation; Circuits; CMOS; Gaussian; Metal oxide semiconductors; Sensors; Simulation; Threshold voltage
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.52.04CE13

A difference-of-Gaussian (DoG) analog CMOS image sensor architecture in which the kernel size and shape are made arbitrarily programmable has been developed based on the MOS subthreshold characteristics. The variability of MOS transistor threshold voltage causes a serious problem in the circuits operating in the subthreshold regime because the current varies exponentially depending on the threshold voltage. The problem has been alleviated by introducing a cancellation scheme employing a switched floating-gate MOS (neuMOS) circuitry. A proof-of-concept chip was designed in a 0.18-μm CMOS technology. The operation of the designed circuits was investigated by SPICE (simulation program with integrated circuit emphasis) simulation and their basic functions were demonstrated. A part of the core function, i.e., the generation of the Gaussian function profile, was confirmed by the measurement of a fabricated test circuit.