Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals

Freestanding AlN single crystals are grown in a RF-heated furnace by physical vapor transport (PVT). Three different growth regimes with growth temperatures between 2080--2200 °C result in different crystal habits and very high structural quality. The Rocking curves show $\mathrm{FWHM}< 21$ arcse...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-08, Vol.52 (8), p.08JA06-08JA06-6
Main Authors: Hartmann, Carsten, Wollweber, Juergen, Dittmar, Andrea, Irmscher, Klaus, Kwasniewski, Albert, Langhans, Frank, Neugut, Tom, Bickermann, Matthias
Format: Article
Language:English
Subjects:
Aluminum nitride
Crystal defects
Crystal structure
Crystals
Density
Furnaces
Nucleation
Reflection
Secondary ion mass spectrometry
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Summary:Freestanding AlN single crystals are grown in a RF-heated furnace by physical vapor transport (PVT). Three different growth regimes with growth temperatures between 2080--2200 °C result in different crystal habits and very high structural quality. The Rocking curves show $\mathrm{FWHM}< 21$ arcsec in the 0002 and $10\bar{1}0$ Reflection on the as-grown facets. Isometric AlN crystals with sizes up to $10\times 10\times 12$ mm 3 show a zonar structure consisting of a yellowish core area which is grown on the N-polar ($000\bar{1}$) facet and a nearly colorless edge region grown on prismatic $\{10\bar{1}0\}$ facets. In the two growth zones nearly the same C concentrations but different amounts of O and Si are measured by secondary ion mass spectrometry (SIMS). The yellowish core area show a very low defect density ($\mathrm{EPD}\leq 100$ cm -2 ) and a higher deep UV transparency compared to the edge region.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.08JA06