High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes

High-efficiency AlGaN-based 355 nm UV light-emitting diodes (LEDs) grown on low-dislocation-density AlGaN/sapphire templates with an output power of 9.8 mW (22.7 mW) at a DC current of 40 mA (100 mA) are reported. The corresponding maximum external quantum efficiency and maximum power efficiency are...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-08, Vol.52 (8), p.08JG16-08JG16-4
Main Authors: Passow, Thorsten, Gutt, Richard, Kunzer, Michael, Pletschen, Wilfried, Kirste, Lutz, Forghani, Kamran, Scholz, Ferdinand, Köhler, Klaus, Wagner, Joachim
Format: Article
Language:English
Subjects:
Direct current
Extraction
Light-emitting diodes
Mathematical analysis
Mathematical models
Power efficiency
Quantum efficiency
Sapphire
Ultraviolet
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Summary:High-efficiency AlGaN-based 355 nm UV light-emitting diodes (LEDs) grown on low-dislocation-density AlGaN/sapphire templates with an output power of 9.8 mW (22.7 mW) at a DC current of 40 mA (100 mA) are reported. The corresponding maximum external quantum efficiency and maximum power efficiency are 7.2 and 6.5%, respectively. Based on a rate equation model, a method is presented to derive the extraction as well as the injection and internal quantum efficiency as a function of the driving current. The thus obtained injection and internal quantum efficiencies amount to 51 and 47% at 40 mA, the extraction efficiency to 29%.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.08JG16