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Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors

The improvement of current collapses of p-GaN gate GaN high-electron-mobility transistors (HEMTs) caused by the effects of surface treatment and the passivation layer was investigated. The NH 3 treatment and high-temperature oxide (HTO) passivation layer on the AlGaN layer are effective in improving...

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Published in:Japanese Journal of Applied Physics 2013-04, Vol.52 (4), p.04CF08-04CF08-5
Main Authors: Katsuno, Takashi, Kanechika, Masakazu, Itoh, Kenji, Nishikawa, Koichi, Uesugi, Tsutomu, Kachi, Tetsu
Format: Article
Language:English
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Summary:The improvement of current collapses of p-GaN gate GaN high-electron-mobility transistors (HEMTs) caused by the effects of surface treatment and the passivation layer was investigated. The NH 3 treatment and high-temperature oxide (HTO) passivation layer on the AlGaN layer are effective in improving the current collapse of a p-GaN gate GaN HEMT. The current collapse at a long time constant ($\tau = 4$ s) could be decreased by the NH 3 treatment of the AlGaN layer, because the nitrogen atoms in nitrogen vacancies in the AlGaN layer (trap level: 0.6 eV) would be incorporated, resulting in a low surface density. The current collapse at an intermediate time constant ($\tau = 11$ ms) could also be decreased by the deposition of the HTO passivation layer on the AlGaN layer, because the low-interface-density layer (trap level: 0.4 eV) of HTO/AlGaN would be formed.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.04CF08