Improved organic thin-film transistor characteristics using an elevated-electrode structure

We propose a new structure for organic thin-film transistors, denoted as "elevated-electrode structure" in which the source and drain electrodes are formed on the elevated insulation layer. Indeed, the experimental data shows that this new structure has more than twice the drain current an...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-11, Vol.53 (11), p.111601-1-111601-4
Main Authors: Kim, Seung Kyum, Shim, Chang-Hoon, Edura, Tomohiko, Adachi, Chihaya, Hattori, Reiji
Format: Article
Language:English
Subjects:
Devices
Drains
Electrodes
Elevated
Insulation
Reproducibility
Semiconductor devices
Thin film transistors
Transistors
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Summary:We propose a new structure for organic thin-film transistors, denoted as "elevated-electrode structure" in which the source and drain electrodes are formed on the elevated insulation layer. Indeed, the experimental data shows that this new structure has more than twice the drain current and mobility of a conventional bottom-structured TFT, this being found to be directly related to the height of the elevated electrode. Moreover, the reproducibility of this data confirms a greater stability than that of either top-contact or bottom-contact devices.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.111601