High-Performance MIM Capacitors With Nanomodulated Electrode Surface

We report on a high-performance metal-insulator- metal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 -8 A/cm 2 . The device is shown to be very stable in terms of frequency, show...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2015-05, Vol.62 (5), p.1568-1573
Main Authors: Hourdakis, Emmanouel, Travlos, Anastassios, Nassiopoulou, Androula G.
Format: Article
Language:English
Subjects:
Aluminum oxide
Anodic alumina
Capacitance
Capacitors
Density
Devices
Dielectrics
Electrodes
Fabrication
high-k dielectric
Leakage current
Leakage currents
metal-insulator-metal (MIM) capacitor
MIM capacitors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c464t-56ae00b9b0fd6ca0174bb5bd670744a9fe10f237baf1e8fc71cb7ff1dc7c2d3e3
cites cdi_FETCH-LOGICAL-c464t-56ae00b9b0fd6ca0174bb5bd670744a9fe10f237baf1e8fc71cb7ff1dc7c2d3e3
container_end_page 1573
container_issue 5
container_start_page 1568
container_title IEEE transactions on electron devices
container_volume 62
creator Hourdakis, Emmanouel
Travlos, Anastassios
Nassiopoulou, Androula G.
description We report on a high-performance metal-insulator- metal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 -8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent
doi_str_mv 10.1109/TED.2015.2411771
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1685782963</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7065297</ieee_id><sourcerecordid>3703446251</sourcerecordid><originalsourceid>FETCH-LOGICAL-c464t-56ae00b9b0fd6ca0174bb5bd670744a9fe10f237baf1e8fc71cb7ff1dc7c2d3e3</originalsourceid><addsrcrecordid>eNpdkM9LwzAYhoMoOKd3wUvBi5fOJM2P5ijbdINNBSceQ5p-cR3tMpP24H9v54YHTx8vPO_Lx4PQNcEjQrC6X00nI4oJH1FGiJTkBA0I5zJVgolTNMCY5KnK8uwcXcS46aNgjA7QZFZ9rtNXCM6HxmwtJMv5MhmbnbFV60NMPqp2nTybrW982dWmhTKZ1mDb4EtI3rrgjIVLdOZMHeHqeIfo_XG6Gs_SxcvTfPywSC0TrE25MIBxoQrsSmENJpIVBS9KIbFkzCgHBDuaycI4ArmzkthCOkdKKy0tM8iG6O6wuwv-q4PY6qaKFurabMF3URORc5lTJbIevf2HbnwXtv13vxTNleCsp_CBssHHGMDpXagaE741wXqvVfda9V6rPmrtKzeHSgUAf7jEglMlsx9v73L9</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1685289654</pqid></control><display><type>article</type><title>High-Performance MIM Capacitors With Nanomodulated Electrode Surface</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Hourdakis, Emmanouel ; Travlos, Anastassios ; Nassiopoulou, Androula G.</creator><creatorcontrib>Hourdakis, Emmanouel ; Travlos, Anastassios ; Nassiopoulou, Androula G.</creatorcontrib><description>We report on a high-performance metal-insulator- metal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 -8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent &lt;;0.1 is shown for the anodic alumina used. Moreover, by introducing nanomodulation to the capacitor electrode, the effective surface area of the capacitor is increased, allowing the use of thicker dielectric layers for the same value of capacitance density. The use of thicker dielectric layers is shown to decrease the leakage current by an order of magnitude and the nonlinearity coefficient α by a factor of 1.8 for the larger capacitance density devices. These results suggest a novel strategy for reducing the α coefficient of a MIM capacitor without decreasing the capacitance density.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2015.2411771</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum oxide ; Anodic alumina ; Capacitance ; Capacitors ; Density ; Devices ; Dielectrics ; Electrodes ; Fabrication ; high-k dielectric ; Leakage current ; Leakage currents ; metal-insulator-metal (MIM) capacitor ; MIM capacitors</subject><ispartof>IEEE transactions on electron devices, 2015-05, Vol.62 (5), p.1568-1573</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) May 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c464t-56ae00b9b0fd6ca0174bb5bd670744a9fe10f237baf1e8fc71cb7ff1dc7c2d3e3</citedby><cites>FETCH-LOGICAL-c464t-56ae00b9b0fd6ca0174bb5bd670744a9fe10f237baf1e8fc71cb7ff1dc7c2d3e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7065297$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,54771</link.rule.ids></links><search><creatorcontrib>Hourdakis, Emmanouel</creatorcontrib><creatorcontrib>Travlos, Anastassios</creatorcontrib><creatorcontrib>Nassiopoulou, Androula G.</creatorcontrib><title>High-Performance MIM Capacitors With Nanomodulated Electrode Surface</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We report on a high-performance metal-insulator- metal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 -8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent &lt;;0.1 is shown for the anodic alumina used. Moreover, by introducing nanomodulation to the capacitor electrode, the effective surface area of the capacitor is increased, allowing the use of thicker dielectric layers for the same value of capacitance density. The use of thicker dielectric layers is shown to decrease the leakage current by an order of magnitude and the nonlinearity coefficient α by a factor of 1.8 for the larger capacitance density devices. These results suggest a novel strategy for reducing the α coefficient of a MIM capacitor without decreasing the capacitance density.</description><subject>Aluminum oxide</subject><subject>Anodic alumina</subject><subject>Capacitance</subject><subject>Capacitors</subject><subject>Density</subject><subject>Devices</subject><subject>Dielectrics</subject><subject>Electrodes</subject><subject>Fabrication</subject><subject>high-k dielectric</subject><subject>Leakage current</subject><subject>Leakage currents</subject><subject>metal-insulator-metal (MIM) capacitor</subject><subject>MIM capacitors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpdkM9LwzAYhoMoOKd3wUvBi5fOJM2P5ijbdINNBSceQ5p-cR3tMpP24H9v54YHTx8vPO_Lx4PQNcEjQrC6X00nI4oJH1FGiJTkBA0I5zJVgolTNMCY5KnK8uwcXcS46aNgjA7QZFZ9rtNXCM6HxmwtJMv5MhmbnbFV60NMPqp2nTybrW982dWmhTKZ1mDb4EtI3rrgjIVLdOZMHeHqeIfo_XG6Gs_SxcvTfPywSC0TrE25MIBxoQrsSmENJpIVBS9KIbFkzCgHBDuaycI4ArmzkthCOkdKKy0tM8iG6O6wuwv-q4PY6qaKFurabMF3URORc5lTJbIevf2HbnwXtv13vxTNleCsp_CBssHHGMDpXagaE741wXqvVfda9V6rPmrtKzeHSgUAf7jEglMlsx9v73L9</recordid><startdate>20150501</startdate><enddate>20150501</enddate><creator>Hourdakis, Emmanouel</creator><creator>Travlos, Anastassios</creator><creator>Nassiopoulou, Androula G.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20150501</creationdate><title>High-Performance MIM Capacitors With Nanomodulated Electrode Surface</title><author>Hourdakis, Emmanouel ; Travlos, Anastassios ; Nassiopoulou, Androula G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c464t-56ae00b9b0fd6ca0174bb5bd670744a9fe10f237baf1e8fc71cb7ff1dc7c2d3e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum oxide</topic><topic>Anodic alumina</topic><topic>Capacitance</topic><topic>Capacitors</topic><topic>Density</topic><topic>Devices</topic><topic>Dielectrics</topic><topic>Electrodes</topic><topic>Fabrication</topic><topic>high-k dielectric</topic><topic>Leakage current</topic><topic>Leakage currents</topic><topic>metal-insulator-metal (MIM) capacitor</topic><topic>MIM capacitors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hourdakis, Emmanouel</creatorcontrib><creatorcontrib>Travlos, Anastassios</creatorcontrib><creatorcontrib>Nassiopoulou, Androula G.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hourdakis, Emmanouel</au><au>Travlos, Anastassios</au><au>Nassiopoulou, Androula G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance MIM Capacitors With Nanomodulated Electrode Surface</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2015-05-01</date><risdate>2015</risdate><volume>62</volume><issue>5</issue><spage>1568</spage><epage>1573</epage><pages>1568-1573</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We report on a high-performance metal-insulator- metal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 -8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent &lt;;0.1 is shown for the anodic alumina used. Moreover, by introducing nanomodulation to the capacitor electrode, the effective surface area of the capacitor is increased, allowing the use of thicker dielectric layers for the same value of capacitance density. The use of thicker dielectric layers is shown to decrease the leakage current by an order of magnitude and the nonlinearity coefficient α by a factor of 1.8 for the larger capacitance density devices. These results suggest a novel strategy for reducing the α coefficient of a MIM capacitor without decreasing the capacitance density.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2015.2411771</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9383
ispartof IEEE transactions on electron devices, 2015-05, Vol.62 (5), p.1568-1573
issn 0018-9383
1557-9646
language eng
recordid cdi_proquest_miscellaneous_1685782963
source IEEE Electronic Library (IEL) Journals
subjects Aluminum oxide
Anodic alumina
Capacitance
Capacitors
Density
Devices
Dielectrics
Electrodes
Fabrication
high-k dielectric
Leakage current
Leakage currents
metal-insulator-metal (MIM) capacitor
MIM capacitors
title High-Performance MIM Capacitors With Nanomodulated Electrode Surface
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T12%3A59%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Performance%20MIM%20Capacitors%20With%20Nanomodulated%20Electrode%20Surface&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Hourdakis,%20Emmanouel&rft.date=2015-05-01&rft.volume=62&rft.issue=5&rft.spage=1568&rft.epage=1573&rft.pages=1568-1573&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2015.2411771&rft_dat=%3Cproquest_cross%3E3703446251%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c464t-56ae00b9b0fd6ca0174bb5bd670744a9fe10f237baf1e8fc71cb7ff1dc7c2d3e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1685289654&rft_id=info:pmid/&rft_ieee_id=7065297&rfr_iscdi=true