Al sub(2)O sub(3) surface passivation and MOS-gate fabrication on AlGaN/GaN high-electron-mobility transistors without Al sub(2)O sub(3) etching process

Al sub(2)O sub(3) passivation by thermal oxidation of aluminium on AlGaN/GaN high-electron-mobility transistors (HEMTs) without Al sub(2)O sub(3) etching is proposed. The deposition of a 5-nm-thick Al film was carried out, followed by a lift-off process to remove Al from the ohmic and contact pad ar...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2015-03, Vol.54 (3), p.038003-1-038003-3
Main Authors: Kim, Jeong-Jin, Park, Young-Rak, Jang, Hyun-Gyu, Na, Je-Ho, Lee, Hyun-Soo, Ko, Sang-Choon, Jung, Dong-Yun, Lee, Hyung-Seok, Mun, Jae-Kyoung, Lim, Jing-Hong, Yang, Jeon-Wook
Format: Article
Language:English
Subjects:
Aluminum
Aluminum gallium nitrides
Aluminum oxide
Etching
Gallium nitrides
Gates
High electron mobility transistors
Semiconductor devices
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Summary:Al sub(2)O sub(3) passivation by thermal oxidation of aluminium on AlGaN/GaN high-electron-mobility transistors (HEMTs) without Al sub(2)O sub(3) etching is proposed. The deposition of a 5-nm-thick Al film was carried out, followed by a lift-off process to remove Al from the ohmic and contact pad area. Subsequently, the Al film was annealed under O sub(2) ambient. When the gate bias was -7 V, the gate leakage currents of a conventional nonpassivated HEMT, a surface-passivated Schottky-gate HEMT, and a surface-passivated MOS-HEMT were determined as 140, 96, and 4.1 mu A/mm, respectively. The current collapse phenomenon in the Al sub(2)O sub(3)-surface-passiva ted devices was evidently suppressed compared with that in the nonpassivated HEMT.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.038003