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Fabrication of high-quality γ-In2Se3 nanostructures using magnetron sputtering

γ-In2Se3 thin films were successfully synthesized using the magnetron sputtering method on cost effective soda lime glass substrates. By adjusting growth process, two different micro- nanostructures were obtained, including the hexagonal platelets with uniformly flat surface and the single crystalli...

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Bibliographic Details
Published in:Materials letters 2013-10, Vol.109, p.291-294
Main Authors: Yan, Yong, Li, Shasha, Ji, Yaxin, Liu, Lian, Yan, Chuanpeng, Zhang, Yong, Yu, Zhou, Zhao, Yong
Format: Article
Language:English
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Summary:γ-In2Se3 thin films were successfully synthesized using the magnetron sputtering method on cost effective soda lime glass substrates. By adjusting growth process, two different micro- nanostructures were obtained, including the hexagonal platelets with uniformly flat surface and the single crystalline ribbons up to 5μm long. X-ray diffraction and Raman studies confirmed the formation of polycrystalline hexagonal defect wurtzite structural In2Se3 grains. The In/Se ratio of nanoribbon was found to be approximately 2/3as indicated by the composition analysis with energy dispersive X-ray spectroscopy. The In2Se3 nanostructures show absorbance in the visible region with direct band gap of 1.94eV. Moreover, the formation mechanism of the nanoribbons has been regarded as a self-catalytic VS deposition process at low temperature. •High-quality γ-In2Se3 structures were synthesized via the magnetron sputtering method.•The In2Se3 nanostructures show absorbance in the visible region with direct band gap of 1.94eV.•The formation mechanism of In2Se3 nanoribbons was discussed in detail.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2013.07.090