Electrical characterization of thieno[3,4-b]thiophene and benzodithiophene copolymer using field-effect transistor configuration

A thieno[3,4-b]thiophene and benzodithiophene copolymer PTB7, which has received much attention as a donor material of organic solar cells, is electrically characterized using a field-effect transistor (FET) configuration. The hole mobility of PTB7 FETs is ∼2.0 × 10−3 cm2·V−1·s−1, which is independe...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-05, Vol.53 (5), p.50305-1-050305-4
Main Authors: Takagi, Kenichiro, Nagase, Takashi, Kobayashi, Takashi, Naito, Hiroyoshi
Format: Article
Language:English
Subjects:
Annealing
Copolymers
Density
Electrical properties
Field effect transistors
Semiconductor devices
Thin films
Threshold voltage
Trapping
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A thieno[3,4-b]thiophene and benzodithiophene copolymer PTB7, which has received much attention as a donor material of organic solar cells, is electrically characterized using a field-effect transistor (FET) configuration. The hole mobility of PTB7 FETs is ∼2.0 × 10−3 cm2·V−1·s−1, which is independent of annealing temperature, while the threshold voltage shifts towards a negative value with increasing annealing temperature. This is due to the increase in the density of deep trapping states with thermal annealing. The threshold voltage also shifts towards a negative value after aging, indicating that additional deep trapping states are generated in PTB7 thin films even at room temperature.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.050305