Epitaxial Growth and Characterization of Self-Doping rm Si 1 - rm x rm Ge rm x rm / Si Multi-Quantum Well Materials

This paper presents self-doping rm Si 1 - rm x rm Ge rm x rm / Si multiquantum wells (MQWs) with35 nm buffer layers where self-doping occurs to allow free carriers in the quantum well. The film grown through ultra-high vacuum chemical vapor deposition method can easily achieve a good lattice quality...

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Bibliographic Details
Published in:Journal of microelectromechanical systems 2014-02, Vol.23 (1), p.213-219
Main Authors: Jiang, Bo, Dong, Tao, Su, Yan, He, Yong, Wang, Kaiying
Format: Article
Language:English
Subjects:
Annealing
Chemical vapor deposition
Contact resistance
Crystal lattices
Electrodes
Germanium
Secondary ion mass spectrometry
Silicon
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Summary:This paper presents self-doping rm Si 1 - rm x rm Ge rm x rm / Si multiquantum wells (MQWs) with35 nm buffer layers where self-doping occurs to allow free carriers in the quantum well. The film grown through ultra-high vacuum chemical vapor deposition method can easily achieve a good lattice quality. The crystal lattice is verified through scanning electron microscopy, X-ray diffraction,and secondary ion mass spectrometry. Unique structures are applied in the Temperature Coefficient of Resistance (TCR) measurement to obtain electrical characteristics of MQWs. The TCR of rm Si 0.65 rm Ge 0.35 / rm Si obtained in the experiment is about-2.5%/K at 20 [compfn] rm C , which meets the requirements of a thermistor. The TCR decreases from 2.5%/K to 1.1%/K as the size of the MQWs increases from 100 mu rm m 100 mu rm m to 400 mu rm m 400 mu rm m . Annealing is necessary for the formation of an ohmic contact between electrodes and high contact layers. hfill [ 2013 hbox - - 0056 ]
ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2013.2269612