Spectroscopic characterization of ion-irradiated multi-layer graphenes

Low-energy Ar ions (0.5–2keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS)...

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Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2013-11, Vol.315, p.64-67
Main Authors: Tsukagoshi, Akira, Honda, Shin-ichi, Osugi, Ryo, Okada, Hiraku, Niibe, Masahito, Terasawa, Mititaka, Hirase, Ryuji, Izumi, Hirokazu, Yoshioka, Hideki, Niwase, Keisuke, Taguchi, Eiji, Lee, Kuei-Yi, Oura, Masaki
Format: Article
Language:English
Subjects:
Basal plane
Fluid dynamics
Fluid flow
Graphene
Ion irradiation
Irradiation
Multilayers
Raman spectroscopy
Turbulent flow
X-ray photoelectron spectroscopy
XAS
XPS
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Summary:Low-energy Ar ions (0.5–2keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp2-hybridized carbon (sp2-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2013.04.039