Characterization of ZnO–SnO2 nanocomposite thin films deposited by pulsed laser ablation and their field effect electronic properties

• Published in: Materials letters 2014-05, Vol.122, p.94-97
• Main Authors: Lee, Su-Jae, Hwang, Chi-Sun, Pi, Jae-Eun, Ryu, Min-Ki, Oh, Himchan, Cho, Sung Haeng, Yang, Jong-Heon, Ko Park, Sang-Hee, Chu, Hye Yong
• Format: Article
• Language: English
• Subjects: Cations; Electronics; Field effect transistors; Laser ablation; Nanocomposite; Nanostructure; Oxide semiconductor; Oxides; Pulsed lasers; Semiconductors; SnO2; Thin films; Transport properties; ZnO
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2014.01.134

ZnO–SnO2 nanocomposite thin films were produced using pulsed laser ablation of pie-shaped ZnO–SnO2 oxides target, and their field effect electronic transport properties investigated as a function of annealing temperature. The films have a nanocomposite structure consisting of ZnO and SnO2 nanoparticles. The amorphous ZnO–SnO2 nanocomposite thin films, as oxide semiconductors, exhibited excellent electronic transport properties with saturation mobility of around 16.9cm2/Vs, turn-on voltage of ~−1V, subthreshold swing of 0.22V/decade, and high drain current on-to-off ratio of over 1010, enough to operate for next-generation microelectronic devices. These results are presumed due to the unique electronic structure of amorphous nanocomposite coupled with two heavy-metal Zn and Sn cations having spherically symmetric s-orbitals. Amorphous ZnO–SnO2 nanocomposite thin films consisting of ZnO and SnO2 nanoparticles were produced by PLD with pie-shaped ZnO–SnO2 oxide targets. ZnO–SnO2 nanocomposite thin film transistors (TFTs) were fabricated, and showed excellent electronic transport properties with saturation mobility of around 16.9cm2/Vs, turn-on voltage of~−1V, subthreshold swing of 0.22V/decade, and drain current on-to-off ratio of over 1010. [Display omitted] •ZnO–SnO2 nanocomposite film was produced by PLD using pie-shaped ZnO–SnO2 target.•The films have a nanocomposite structure consisting of ZnO and SnO2 nanoparticles.•The amorphous ZnO–SnO2 nanocomposite TFTs were fabricated and characterized.•The amorphous films as active layer showed excellent field effect electronic properties.•The TFTs have high mobility of 16.9cm2/Vs and low subthreshold swing of 0.22V/dec.