Loading…
Using RADFET for the real-time measurement of gamma radiation dose rate
RADFETs (RADiation sensitive Field Effect Transistors) are integrating ionizing radiation dosimeters operating on the principle of conversion of radiation-induced threshold voltage shift into absorbed dose. However, one of the major drawbacks of RADFETs is the inability to provide the information on...
Saved in:
Published in: | Measurement science & technology 2015-02, Vol.26 (2), p.25004-12 |
---|---|
Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c328t-f48a49cc1ea8eaa3fceb39cd05f1a5c12023b987e68a0b273c8f5d2c2f2ceb443 |
---|---|
cites | cdi_FETCH-LOGICAL-c328t-f48a49cc1ea8eaa3fceb39cd05f1a5c12023b987e68a0b273c8f5d2c2f2ceb443 |
container_end_page | 12 |
container_issue | 2 |
container_start_page | 25004 |
container_title | Measurement science & technology |
container_volume | 26 |
creator | Andjelkovi, Marko S Risti, Goran S Jakši, Aleksandar B |
description | RADFETs (RADiation sensitive Field Effect Transistors) are integrating ionizing radiation dosimeters operating on the principle of conversion of radiation-induced threshold voltage shift into absorbed dose. However, one of the major drawbacks of RADFETs is the inability to provide the information on the dose rate in real-time using the conventional absorbed dose measurement technique. The real-time monitoring of dose rate and absorbed dose can be achieved with the current mode dosimeters such as PN and PIN diodes/photodiodes, but these dosimeters have some limitations as absorbed dose meters and hence they are often not a suitable replacement for RADFETs. In that sense, this paper investigates the possibility of using the RADFET as a real-time dose rate meter so that it could be applied for simultaneous online measurement of the dose rate and absorbed dose. A RADFET sample, manufactured by Tyndall National Institute, Cork, Ireland, was tested as a dose rate meter under gamma irradiation from a Co-60 source. The RADFET was configured as a PN junction, such that the drain, gate and source terminals were grounded, while the radiation-induced current was measured at the bulk terminal, whereby the bulk was successively biased with 0 , 10 , 20 and 30 V. In zero-bias mode the radiation-induced current was unstable, but in the biased mode the current response was stable for the investigated dose rates from 0.65 to 32.1 Gy h−1 and up to the total absorbed dose of 25 Gy. The current increased with the dose rate in accordance with the power law, whereas the sensitivity of the current read-out was linear with respect to the applied bias voltage. Comparison with previously analyzed PIN photodiodes has shown that the investigated RADFET is competitive with PIN photodiodes as a gamma radiation dose rate meter and therefore has the potential to be employed for the real-time monitoring of the dose rate and absorbed dose. |
doi_str_mv | 10.1088/0957-0233/26/2/025004 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1685791973</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1685791973</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-f48a49cc1ea8eaa3fceb39cd05f1a5c12023b987e68a0b273c8f5d2c2f2ceb443</originalsourceid><addsrcrecordid>eNqFkMtOwzAQRS0EEqXwCUhesgnxI07sZcWjIFVCQnRtTZ1xSZXExU4W_D2pgtiyms25V3cOIbec3XOmdc6MqjImpMxFmYucCcVYcUYWXJY8KxXj52Txx1ySq5QOjLGKGbMg621q-j19Xz0-P31QHyIdPpFGhDYbmg5ph5DGiB32Aw2e7qHrgEaoGxia0NM6pImGAa_JhYc24c3vXZLtVPjwkm3e1q8Pq03mpNBD5gsNhXGOI2gEkN7hThpXM-U5KMfFNHFndIWlBrYTlXTaq1o44cVEFoVckru59xjD14hpsF2THLYt9BjGZHmpVWW4qeSEqhl1MaQU0dtjbDqI35YzexJnT1LsSYoVpRV2Fjfl-JxrwtEewhj76aF_Mj8kNW7z</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1685791973</pqid></control><display><type>article</type><title>Using RADFET for the real-time measurement of gamma radiation dose rate</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Andjelkovi, Marko S ; Risti, Goran S ; Jakši, Aleksandar B</creator><creatorcontrib>Andjelkovi, Marko S ; Risti, Goran S ; Jakši, Aleksandar B</creatorcontrib><description>RADFETs (RADiation sensitive Field Effect Transistors) are integrating ionizing radiation dosimeters operating on the principle of conversion of radiation-induced threshold voltage shift into absorbed dose. However, one of the major drawbacks of RADFETs is the inability to provide the information on the dose rate in real-time using the conventional absorbed dose measurement technique. The real-time monitoring of dose rate and absorbed dose can be achieved with the current mode dosimeters such as PN and PIN diodes/photodiodes, but these dosimeters have some limitations as absorbed dose meters and hence they are often not a suitable replacement for RADFETs. In that sense, this paper investigates the possibility of using the RADFET as a real-time dose rate meter so that it could be applied for simultaneous online measurement of the dose rate and absorbed dose. A RADFET sample, manufactured by Tyndall National Institute, Cork, Ireland, was tested as a dose rate meter under gamma irradiation from a Co-60 source. The RADFET was configured as a PN junction, such that the drain, gate and source terminals were grounded, while the radiation-induced current was measured at the bulk terminal, whereby the bulk was successively biased with 0 , 10 , 20 and 30 V. In zero-bias mode the radiation-induced current was unstable, but in the biased mode the current response was stable for the investigated dose rates from 0.65 to 32.1 Gy h−1 and up to the total absorbed dose of 25 Gy. The current increased with the dose rate in accordance with the power law, whereas the sensitivity of the current read-out was linear with respect to the applied bias voltage. Comparison with previously analyzed PIN photodiodes has shown that the investigated RADFET is competitive with PIN photodiodes as a gamma radiation dose rate meter and therefore has the potential to be employed for the real-time monitoring of the dose rate and absorbed dose.</description><identifier>ISSN: 0957-0233</identifier><identifier>EISSN: 1361-6501</identifier><identifier>DOI: 10.1088/0957-0233/26/2/025004</identifier><identifier>CODEN: MSTCEP</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>Dosage ; dose rate ; Dosimeters ; gamma radiation ; Gamma rays ; Measuring instruments ; Meters ; Monitoring ; Photodiodes ; RADFET ; Real time ; real-time measurement</subject><ispartof>Measurement science & technology, 2015-02, Vol.26 (2), p.25004-12</ispartof><rights>2015 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-f48a49cc1ea8eaa3fceb39cd05f1a5c12023b987e68a0b273c8f5d2c2f2ceb443</citedby><cites>FETCH-LOGICAL-c328t-f48a49cc1ea8eaa3fceb39cd05f1a5c12023b987e68a0b273c8f5d2c2f2ceb443</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Andjelkovi, Marko S</creatorcontrib><creatorcontrib>Risti, Goran S</creatorcontrib><creatorcontrib>Jakši, Aleksandar B</creatorcontrib><title>Using RADFET for the real-time measurement of gamma radiation dose rate</title><title>Measurement science & technology</title><addtitle>MST</addtitle><addtitle>Meas. Sci. Technol</addtitle><description>RADFETs (RADiation sensitive Field Effect Transistors) are integrating ionizing radiation dosimeters operating on the principle of conversion of radiation-induced threshold voltage shift into absorbed dose. However, one of the major drawbacks of RADFETs is the inability to provide the information on the dose rate in real-time using the conventional absorbed dose measurement technique. The real-time monitoring of dose rate and absorbed dose can be achieved with the current mode dosimeters such as PN and PIN diodes/photodiodes, but these dosimeters have some limitations as absorbed dose meters and hence they are often not a suitable replacement for RADFETs. In that sense, this paper investigates the possibility of using the RADFET as a real-time dose rate meter so that it could be applied for simultaneous online measurement of the dose rate and absorbed dose. A RADFET sample, manufactured by Tyndall National Institute, Cork, Ireland, was tested as a dose rate meter under gamma irradiation from a Co-60 source. The RADFET was configured as a PN junction, such that the drain, gate and source terminals were grounded, while the radiation-induced current was measured at the bulk terminal, whereby the bulk was successively biased with 0 , 10 , 20 and 30 V. In zero-bias mode the radiation-induced current was unstable, but in the biased mode the current response was stable for the investigated dose rates from 0.65 to 32.1 Gy h−1 and up to the total absorbed dose of 25 Gy. The current increased with the dose rate in accordance with the power law, whereas the sensitivity of the current read-out was linear with respect to the applied bias voltage. Comparison with previously analyzed PIN photodiodes has shown that the investigated RADFET is competitive with PIN photodiodes as a gamma radiation dose rate meter and therefore has the potential to be employed for the real-time monitoring of the dose rate and absorbed dose.</description><subject>Dosage</subject><subject>dose rate</subject><subject>Dosimeters</subject><subject>gamma radiation</subject><subject>Gamma rays</subject><subject>Measuring instruments</subject><subject>Meters</subject><subject>Monitoring</subject><subject>Photodiodes</subject><subject>RADFET</subject><subject>Real time</subject><subject>real-time measurement</subject><issn>0957-0233</issn><issn>1361-6501</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEqXwCUhesgnxI07sZcWjIFVCQnRtTZ1xSZXExU4W_D2pgtiyms25V3cOIbec3XOmdc6MqjImpMxFmYucCcVYcUYWXJY8KxXj52Txx1ySq5QOjLGKGbMg621q-j19Xz0-P31QHyIdPpFGhDYbmg5ph5DGiB32Aw2e7qHrgEaoGxia0NM6pImGAa_JhYc24c3vXZLtVPjwkm3e1q8Pq03mpNBD5gsNhXGOI2gEkN7hThpXM-U5KMfFNHFndIWlBrYTlXTaq1o44cVEFoVckru59xjD14hpsF2THLYt9BjGZHmpVWW4qeSEqhl1MaQU0dtjbDqI35YzexJnT1LsSYoVpRV2Fjfl-JxrwtEewhj76aF_Mj8kNW7z</recordid><startdate>20150201</startdate><enddate>20150201</enddate><creator>Andjelkovi, Marko S</creator><creator>Risti, Goran S</creator><creator>Jakši, Aleksandar B</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20150201</creationdate><title>Using RADFET for the real-time measurement of gamma radiation dose rate</title><author>Andjelkovi, Marko S ; Risti, Goran S ; Jakši, Aleksandar B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-f48a49cc1ea8eaa3fceb39cd05f1a5c12023b987e68a0b273c8f5d2c2f2ceb443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Dosage</topic><topic>dose rate</topic><topic>Dosimeters</topic><topic>gamma radiation</topic><topic>Gamma rays</topic><topic>Measuring instruments</topic><topic>Meters</topic><topic>Monitoring</topic><topic>Photodiodes</topic><topic>RADFET</topic><topic>Real time</topic><topic>real-time measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Andjelkovi, Marko S</creatorcontrib><creatorcontrib>Risti, Goran S</creatorcontrib><creatorcontrib>Jakši, Aleksandar B</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Measurement science & technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Andjelkovi, Marko S</au><au>Risti, Goran S</au><au>Jakši, Aleksandar B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Using RADFET for the real-time measurement of gamma radiation dose rate</atitle><jtitle>Measurement science & technology</jtitle><stitle>MST</stitle><addtitle>Meas. Sci. Technol</addtitle><date>2015-02-01</date><risdate>2015</risdate><volume>26</volume><issue>2</issue><spage>25004</spage><epage>12</epage><pages>25004-12</pages><issn>0957-0233</issn><eissn>1361-6501</eissn><coden>MSTCEP</coden><abstract>RADFETs (RADiation sensitive Field Effect Transistors) are integrating ionizing radiation dosimeters operating on the principle of conversion of radiation-induced threshold voltage shift into absorbed dose. However, one of the major drawbacks of RADFETs is the inability to provide the information on the dose rate in real-time using the conventional absorbed dose measurement technique. The real-time monitoring of dose rate and absorbed dose can be achieved with the current mode dosimeters such as PN and PIN diodes/photodiodes, but these dosimeters have some limitations as absorbed dose meters and hence they are often not a suitable replacement for RADFETs. In that sense, this paper investigates the possibility of using the RADFET as a real-time dose rate meter so that it could be applied for simultaneous online measurement of the dose rate and absorbed dose. A RADFET sample, manufactured by Tyndall National Institute, Cork, Ireland, was tested as a dose rate meter under gamma irradiation from a Co-60 source. The RADFET was configured as a PN junction, such that the drain, gate and source terminals were grounded, while the radiation-induced current was measured at the bulk terminal, whereby the bulk was successively biased with 0 , 10 , 20 and 30 V. In zero-bias mode the radiation-induced current was unstable, but in the biased mode the current response was stable for the investigated dose rates from 0.65 to 32.1 Gy h−1 and up to the total absorbed dose of 25 Gy. The current increased with the dose rate in accordance with the power law, whereas the sensitivity of the current read-out was linear with respect to the applied bias voltage. Comparison with previously analyzed PIN photodiodes has shown that the investigated RADFET is competitive with PIN photodiodes as a gamma radiation dose rate meter and therefore has the potential to be employed for the real-time monitoring of the dose rate and absorbed dose.</abstract><pub>IOP Publishing</pub><doi>10.1088/0957-0233/26/2/025004</doi><tpages>12</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0957-0233 |
ispartof | Measurement science & technology, 2015-02, Vol.26 (2), p.25004-12 |
issn | 0957-0233 1361-6501 |
language | eng |
recordid | cdi_proquest_miscellaneous_1685791973 |
source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
subjects | Dosage dose rate Dosimeters gamma radiation Gamma rays Measuring instruments Meters Monitoring Photodiodes RADFET Real time real-time measurement |
title | Using RADFET for the real-time measurement of gamma radiation dose rate |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T03%3A22%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Using%20RADFET%20for%20the%20real-time%20measurement%20of%20gamma%20radiation%20dose%20rate&rft.jtitle=Measurement%20science%20&%20technology&rft.au=Andjelkovi,%20Marko%20S&rft.date=2015-02-01&rft.volume=26&rft.issue=2&rft.spage=25004&rft.epage=12&rft.pages=25004-12&rft.issn=0957-0233&rft.eissn=1361-6501&rft.coden=MSTCEP&rft_id=info:doi/10.1088/0957-0233/26/2/025004&rft_dat=%3Cproquest_cross%3E1685791973%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c328t-f48a49cc1ea8eaa3fceb39cd05f1a5c12023b987e68a0b273c8f5d2c2f2ceb443%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1685791973&rft_id=info:pmid/&rfr_iscdi=true |