Effect of PbO excess on the microstructure, dielectric and piezoelectric properties, and energy-storage performance of Bi(Ni sub(1/2)Ti sub(1/2))O sub(3)-PbTiO sub(3) thin films

Ferroelectric Bi(Ni sub(1/2)Ti sub(1/2))O sub(3)-PbTiO sub(3) (BNT-PT) thin films near the morphotropic phase boundary (MPB) with different amount of excess lead (0, 10, and 20%) were successfully deposited onto Pt(111)/Ti/SiO sub(2)/Si substrates via a chemical solution approach. The effects of exc...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-01, Vol.53 (8S3), p.08NA02-1-08NA02-4
Main Authors: Xie, Zhenkun, Yue, Zhenxing, Peng, Bin, Li, Longtu
Format: Article
Language:English
Subjects:
Density
Dielectric constant
Dielectric properties
Ferroelectric materials
Ferroelectricity
Microstructure
Phase boundaries
Piezoelectricity
Thin films
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Summary:Ferroelectric Bi(Ni sub(1/2)Ti sub(1/2))O sub(3)-PbTiO sub(3) (BNT-PT) thin films near the morphotropic phase boundary (MPB) with different amount of excess lead (0, 10, and 20%) were successfully deposited onto Pt(111)/Ti/SiO sub(2)/Si substrates via a chemical solution approach. The effects of excess lead on the microstructure, dielectric and piezoelectric properties, and energy-storage performance of the thin films were investigated in detail. X-ray diffraction results revealed that the films showed an increasing (100)-orientation with an increasing amount of excess lead. Dielectric, ferroelectric, and current-voltage measurements showed that the films with more excess lead exhibited an enhanced dielectric constant and greater back-switch behavior, while the smaller leakage current density. As a result, the energy-storage density was also markedly improved from 22.8 to 50.2 J/cm super(3) under an electric field of 2250 kV/cm. The effective piezoelectric constant d sub(33) increased from 41.5 to 70.1 pm/V with increasing excess lead from 0 to 20%.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.08NA02