Advances in atmospheric pressure PECVD: The influence of plasma parameters on film morphology

• Published in: Surface & coatings technology 2013-09, Vol.230, p.73-76
• Main Authors: Hodgkinson, J.L., Sheel, D.W.
• Format: Article
• Language: English
• Subjects: Atmospheric Pressure; Barometric pressure; Chemical vapor deposition; Coatings; Cross-disciplinary physics: materials science; rheology; Crystal Structure; CVD; Density; Exact sciences and technology; Film growth; Low cost; Materials science; Physics; Pulse Plasma; Stability; Surface treatments; Titania
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2013.06.079

Atmospheric pressure (AP) PECVD systems have attracted considerable interest in recent years due to the significant benefits for large area, low cost substrates and low temperature operation. However to date, the film properties have tended to be compromised compared to those offered by more established technologies. In particular whilst growth may be possible at significantly reduced substrate temperatures, the films are typically amorphous due to reduced surface mobility. Additionally, film density can be reduced compared to competitive vacuum based approaches due to a lack of ion bombardment. Recent advances in AP plasma technology have shown considerable potential, with increased stability and with some reports proposing the possibility of ion based interactions at atmospheric pressure. In this work we apply this new approach to an APCVD process, enabling control of film growth and crystal structure, indicating significant potential for application. •Sub-microsecond pulse plasma applied to an atmospheric pressure CVD process for the deposition of titania.•Anatase films produced at a substrate temperature of 275°C.•Pulse repetition rate influenced growth rate and structure.•Possible to vary the relative proportions of anatase and rutile phases via the pulse repetition rate.