Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO sub(2) films

Dynamic fluctuation in stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. This investigation showed that V-SILC is attributed to random telegraph noise, which is associated with a state transition of a single defect. To analyz...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-01, Vol.53 (8S1), p.08LB01-1-08LB01-6
Main Authors: Ishida, Tega, Naoki, Mori, Yuki, Miki, Hiroshi, Mine, Toshiyuki, Kume, Hitoshi, Torii, Kazuyoshi, Yamada, Ren-ichi, Shiraishi
Format: Article
Language:English
Subjects:
A defects
Charge
Current injection
Dynamic tests
Flash memory (computers)
Fluctuation
Gates
Leakage current
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Summary:Dynamic fluctuation in stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. This investigation showed that V-SILC is attributed to random telegraph noise, which is associated with a state transition of a single defect. To analyze the mechanism of the state transition, dependences of state-transition probabilities on gate current and temperature were investigated. These dependences indicate that the state transitions are caused by current injection, and the mechanism of the state transition causing V-SILC is a defect-structure transition caused by charge collision.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.08LB01