The enhanced efficiency of graphene-silicon solar cells by electric field doping

The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we de...

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Bibliographic Details
Published in:Nanoscale 2015-04, Vol.7 (16), p.7072-7077
Main Authors: Yu, Xuegong, Yang, Lifei, Lv, Qingmin, Xu, Mingsheng, Chen, Hongzheng, Yang, Deren
Format: Article
Language:English
Subjects:
Doping
Electric fields
Electrical junctions
Energy conversion efficiency
Nanostructure
Performance enhancement
Photovoltaic cells
Solar cells
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Summary:The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.
ISSN:2040-3364
2040-3372
DOI:10.1039/c4nr06677d