The enhanced efficiency of graphene-silicon solar cells by electric field doping

• Published in: Nanoscale 2015-04, Vol.7 (16), p.7072-7077
• Main Authors: Yu, Xuegong, Yang, Lifei, Lv, Qingmin, Xu, Mingsheng, Chen, Hongzheng, Yang, Deren
• Format: Article
• Language: English
• Subjects: Doping; Electric fields; Electrical junctions; Energy conversion efficiency; Nanostructure; Performance enhancement; Photovoltaic cells; Solar cells
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/c4nr06677d

The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.