A New Copper Alloy Film for Barrierless Si Metallization and Solder Bump Flip-Chip Application

In this study, a copper alloy, Cu(MnN x ), film is developed by cosputtering Cu and Mn on a barrierless Si substrate within an Ar/N 2 gas atmosphere. The resulting alloy film exhibits good thermal stability and adhesion to the substrate with no noticeable interactions between the film and the substr...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-05, Vol.52 (5), p.05FB01-05FB01-6
Main Author: Lin, Chon-Hsin
Format: Article
Language:English
Subjects:
ANNEALING PROCESSES
CHIPS
Copper
COPPER ALLOYS (40 TO 99.3 CU)
Copper base alloys
Metallizing
METALLIZING (FOR PLATING)
Metallurgy
Rendering
Silicon
SOLDERING ALLOYS
Solders
THERMAL STABILITY
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, a copper alloy, Cu(MnN x ), film is developed by cosputtering Cu and Mn on a barrierless Si substrate within an Ar/N 2 gas atmosphere. The resulting alloy film exhibits good thermal stability and adhesion to the substrate with no noticeable interactions between the film and the substrate after annealing at 700 °C for 1 h, indicating that the film is thermally stable. The alloy film shall be able to replace both the wetting and diffusion layers for the flip-chip solder joints in conventional under bump metallurgy to reduce the manufacturing cost. We also observe that the Cu(MnN x ) alloy exhibits a solder ability comparable to that of pure Cu and a dissolution rate lower than that of pure Cu by at least one order of magnitude. The alloy's consumption rate is comparable to that of Ni, rendering the alloy a candidate material in both barrierless Si metallization and solder bump flip-chip application.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.05FB01