Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO sub(2)) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO sub(2)...

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Bibliographic Details
Published in:Journal of crystal growth 2015-04, Vol.416, p.21-27
Main Authors: Nam, Ju Hyung, Alkis, Sabri, Nam, Donguk, Afshinmanesh, Farzaneh, Shim, Jaewoo, Park, Jin-Hong, Brongersma, Mark, Okyay, Ali Kemal, Kamins, I, Saraswat, Krishna
Format: Article
Language:English
Subjects:
Crystal structure
Crystals
Germanium
Insulators
Silicon
Silicon dioxide
Transmission electron microscopy
Wavelengths
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Summary:A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO sub(2)) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO sub(2) as growth mask. Lateral overgrowth of Ge crystal covers SiO sub(2) surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO sub(2). Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength.
ISSN:0022-0248
DOI:10.1016/j.crysgro.2014.11.004