Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon

A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO sub(2)) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO sub(2)...

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Published in:Journal of crystal growth 2015-04, Vol.416, p.21-27
Main Authors: Nam, Ju Hyung, Alkis, Sabri, Nam, Donguk, Afshinmanesh, Farzaneh, Shim, Jaewoo, Park, Jin-Hong, Brongersma, Mark, Okyay, Ali Kemal, Kamins, I, Saraswat, Krishna
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Language:English
Subjects:
Crystal structure
Crystals
Germanium
Insulators
Silicon
Silicon dioxide
Transmission electron microscopy
Wavelengths
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container_issue
container_start_page 21
container_title Journal of crystal growth
container_volume 416
creator Nam, Ju Hyung
Alkis, Sabri
Nam, Donguk
Afshinmanesh, Farzaneh
Shim, Jaewoo
Park, Jin-Hong
Brongersma, Mark
Okyay, Ali Kemal
Kamins, I
Saraswat, Krishna
description A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO sub(2)) is thermally grown and patterned to define growth window for germanium (Ge). Crystalline Ge is grown via selective hetero-epitaxy, using SiO sub(2) as growth mask. Lateral overgrowth of Ge crystal covers SiO sub(2) surface and neighboring Ge crystals coalesce with each other. Therefore, single crystalline Ge sitting on insulator for GOI applications is achieved. Chemical mechanical polishing (CMP) is performed to planarize the GOI surface. Transmission electron microscopy (TEM) analysis, Raman spectroscopy, and time-resolved photoluminescence (TRPL) show high quality crystalline Ge sitting on SiO sub(2). Optical response from metal-semiconductor-metal (MSM) photodetector shows good optical absorption at 850 nm and 1550 nm wavelength.
doi_str_mv 10.1016/j.crysgro.2014.11.004
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subjects Crystal structure
Crystals
Germanium
Insulators
Silicon
Silicon dioxide
Transmission electron microscopy
Wavelengths
title Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon
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