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Structural, optical and electrical properties of Sb sub(2)Te sub(3) films prepared by pulsed laser deposition

Sb sub(2)Te sub(3) films were deposited using pulsed laser deposition technique onto substrates heated up to different temperatures. According to X-ray diffraction analysis, the films were well crystallized with preferred orientation of (00l), and belong to the rhombohedral structure. Raman spectrum...

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Bibliographic Details
Published in:Journal of crystal growth 2015-04, Vol.416, p.78-81
Main Authors: Liu, Tantan, Deng, Hongmei, Cao, Huiyi, Zhou, Wenliang, Zhang, Jun, Liu, Jian, Yang, Pingxiong, Chu, Junhao
Format: Article
Language:English
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Summary:Sb sub(2)Te sub(3) films were deposited using pulsed laser deposition technique onto substrates heated up to different temperatures. According to X-ray diffraction analysis, the films were well crystallized with preferred orientation of (00l), and belong to the rhombohedral structure. Raman spectrum explained the change of microstructure by the lattice vibration modes, revealing the dependent relationship between the nucleation rate and substrate temperatures. The scanning electron microscope images exhibit uniform and smooth films surface morphologies. Additionally, the absorption coefficient of the film is above 10 super(4) cm super(-1) in the infrared range and the corresponding optical band gap is around 0.32 eV. The resistivity of the films decreases as the substrate temperature increases, and the temperature coefficient of resistance for Sb sub(2)Te sub(3) films is 0.15% K super(-1). These results imply that Sb sub(2)Te sub(3) films have a potential application for uncooled infrared detection.
ISSN:0022-0248
DOI:10.1016/j.crysgro.2014.01.022