Complementary-Metal--Oxide--Semiconductor Technology-Compatible Tunneling Field-Effect Transistors with 14 nm Gate, Sigma-Shape Source, and Recessed Channel

A new design of tunneling field-effect transistor (TFET) focusing on the compatibility to the current Si complementary-metal--oxide--semiconductor (CMOS) technology is proposed. In addition to use of the structural components of the state-of-the-art CMOS technologies, such as $\Sigma$-shaped embedde...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2013-06, Vol.52 (6), p.06GE06-06GE06-5
Main Authors: Sun, Min-Chul, Kim, Sang Wan, Kim, Hyun Woo, Kim, Hyungjin, Park, Byung-Gook
Format: Article
Language:English
Subjects:
Channels
CMOS
Composition effects
Devices
Field effect transistors
Semiconductor devices
Silicon germanides
Tunneling
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Summary:A new design of tunneling field-effect transistor (TFET) focusing on the compatibility to the current Si complementary-metal--oxide--semiconductor (CMOS) technology is proposed. In addition to use of the structural components of the state-of-the-art CMOS technologies, such as $\Sigma$-shaped embedded SiGe and the replacement gate techniques, two-step sidewall image transfer gate-patterning and channel recess process are adopted to form highly-scaled nanoscale TFET. Process integration scheme and the expected device characteristics are examined on the basis of technology computer-aided design (TCAD) simulation on 14-nm-gate model devices. Tunability of transfer characteristics with doping around tip region, control of short-channel effect with channel recess, and improvement of current drivaility with SiGe composition are studied. Design of the source region is found to be critical in controlling the current drivability of the device and output characteristics.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.06GE06