Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p–n or Schottky junctions. Here we rep...

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Bibliographic Details
Published in:Nano letters 2015-06, Vol.15 (6), p.3709-3715
Main Authors: Huh, Junghwan, Yun, Hoyeol, Kim, Dong-Chul, Munshi, A. Mazid, Dheeraj, Dasa L, Kauko, Hanne, van Helvoort, Antonius T. J, Lee, SangWook, Fimland, Bjørn-Ove, Weman, Helge
Format: Article
Language:English
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Summary:Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p–n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.5b00089