Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors

Atomically thin molybdenum disulfide (MoS2) is a promising two-dimensional semiconductor for high-performance flexible electronics, sensors, transducers, and energy conversion. Here, piezoresistive strain sensing with flexible MoS2 field-effect transistors (FETs) made from highly uniform large-area...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2015-06, Vol.7 (23), p.12850-12855
Main Authors: Tsai, Meng-Yen, Tarasov, Alexey, Hesabi, Zohreh R, Taghinejad, Hossein, Campbell, Philip M, Joiner, Corey A, Adibi, Ali, Vogel, Eric M
Format: Article
Language:English
Online Access:Get full text
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Summary:Atomically thin molybdenum disulfide (MoS2) is a promising two-dimensional semiconductor for high-performance flexible electronics, sensors, transducers, and energy conversion. Here, piezoresistive strain sensing with flexible MoS2 field-effect transistors (FETs) made from highly uniform large-area films is demonstrated. The origin of the piezoresistivity in MoS2 is the strain-induced band gap change, which is confirmed by optical reflection spectroscopy. In addition, the sensitivity to strain can be tuned by more than 1 order of magnitude by adjusting the Fermi level via gate biasing.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.5b02336