Fabrication of millimetre-wave Gunn and IMPATT devices with integral heat sink and integral bonding ribbon: a new approach

Discrete millimetre-wave devices, i.e. Gunn and IMPATT diodes, dissipate a large amount of power in the form of heat. Devices fabricated with an integral heat sink (IHS) are known to show superior performance compared with conventional devices. A novel process was developed for the fabrication of IH...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1994, Vol.28 (1), p.253-256
Main Authors: Chandra, Ishwar, Gulati, R., Sharma, H.S., Mohan, S., Naik, A.A., Sai Saravanan, G.
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Etching
Exact sciences and technology
Film deposition
GaAs
Q1
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Discrete millimetre-wave devices, i.e. Gunn and IMPATT diodes, dissipate a large amount of power in the form of heat. Devices fabricated with an integral heat sink (IHS) are known to show superior performance compared with conventional devices. A novel process was developed for the fabrication of IHS integral bonding ribbon (IBR) millimetre-wave devices. The method employs “through holes” generated on the wafer as marks for “front to back” alignment of the IHS and IBR. The process is found to be highly reproducible and versatile. Devices have shown several advantages in terms of ease of processing and yield. The process can thus be used to fabricate devices different semiconductor materials and possibly for all devices requiring the IHS-IBR configuration.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)90058-2