The effect of lanthanum (La) incorporation in ultra-thin ZrO sub(2) high- Kappa gate dielectrics

Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO sub(2) (ZrLaO) high- Kappa gate dielectrics through co-sputtering technique have been fabricated. The effect of la incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM im...

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Bibliographic Details
Published in:Microelectronic engineering 2012-01, Vol.89, p.2-5
Main Authors: Liu, Chuan-Hsi, Juan, Pi-Chun, Chou, Yi-Hsien, Hsu, Hung-Wen
Format: Article
Language:English
Subjects:
Dielectrics
Electric potential
Gates
Metal oxide semiconductors
Reduction
X-ray photoelectron spectroscopy
Zirconium dioxide
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Summary:Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO sub(2) (ZrLaO) high- Kappa gate dielectrics through co-sputtering technique have been fabricated. The effect of la incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of la into ZrO sub(2) can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with la incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.
ISSN:0167-9317
DOI:10.1016/j.mee.2011.08.003