Effect of Bi2O3 Doping on the Sintering Temperature and Microwave Dielectric Properties of LiAlSiO4 Ceramics

When Bi2O3 was added to LiAlSiO4 ceramics, Bi12SiO20 secondary phase was formed. Since the melting temperature of Bi12SiO20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO4 ceramics. When 15.0 mol% Bi2O3 was added, the LiAlSiO4 cera...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2012-06, Vol.95 (6), p.1811-1813
Main Authors: Jeong, Byoung-Jik, Joung, Mi-Ri, Kweon, Sang-Hyo, Kim, Jin-Seong, Nahm, Sahn, Choi, Ji-Won, Hwang, Seong-Ju
Format: Article
Language:English
Subjects:
Ceramic sintering
Ceramics
Densification
Dielectric properties
Doping
Liquid phases
Melting
Microwaves
Phase transitions
Sintering
Temperature
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Summary:When Bi2O3 was added to LiAlSiO4 ceramics, Bi12SiO20 secondary phase was formed. Since the melting temperature of Bi12SiO20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO4 ceramics. When 15.0 mol% Bi2O3 was added, the LiAlSiO4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi2O3 they could even be sintered at 875°C. The 15.0 mol% Bi2O3‐doped LiAlSiO4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low εr of 4.3, a high Q × f of 62 430 GHz and a small τf of −16.21 ppm/oC.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1551-2916.2012.05222.x