Kinetics Study on the Liquid Entrapment and Melt Transport of Static and Falling-Film Melt Crystallization

Experiments were carried out to study the kinetics of crystal growth and the sweating process in two kinds of melt crystallization modes: static melt crystallization (SMC) and falling-film melt crystallization (FFMC). The system utilized in this paper was hyperpure phosphoric acid with water and tra...

Full description

Saved in:
Bibliographic Details
Published in:Industrial & engineering chemistry research 2012-04, Vol.51 (13), p.5037-5044
Main Authors: Jiang, Xiaobin, Hou, Baohong, Zhao, Yingying, Wang, Jingkang, Zhang, Meijing
Format: Article
Language:English
Subjects:
Applied sciences
Chemical engineering
Crystal growth
Crystallization
Entrapment
Exact sciences and technology
Impurities
Liquids
Magnesium
Mathematical models
Melts (crystal growth)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Experiments were carried out to study the kinetics of crystal growth and the sweating process in two kinds of melt crystallization modes: static melt crystallization (SMC) and falling-film melt crystallization (FFMC). The system utilized in this paper was hyperpure phosphoric acid with water and trace amounts of metal ions as impurities. The kinetic experimental data of crystal growth, liquid entrapment, and the melt-transport process were well fitted by power function equations (R 2 > 0.947). The fractal and porous media theories were introduced to improve the model of melt transport and explain the difference between the two modes. The separation efficiencies of SMC and FFMC on different ion impurities were compared. The SMC mode separated calcium and ferrum ions with higher efficiency than the FFMC mode, while the FFMC mode separated sodium and magnesium ions better than the SMC mode. A combined operation mode was suggested to prepare hyperpure phosphoric acid in industrial applications.
ISSN:0888-5885
1520-5045
DOI:10.1021/ie202615b