Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the te...

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Bibliographic Details
Published in:Ceramics international 2014-03, Vol.40 (2), p.3785-3791
Main Authors: Boratto, Miguel Henrique, de Andrade Scalvi, Luis Vicente
Format: Article
Language:English
Subjects:
Alumina
Aluminum
Aluminum oxide
Annealing
Crystallization
Evaporation
Oxidation
Resistive evaporation
Silicon substrates
Temperature
Thermal annealing
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Summary:Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for reasonable oxidation, which is accelerated up to 8 times for O2-rich atmosphere. Results of surface electrical resistivity and Raman spectroscopy are in good agreement with these findings. Surprisingly, X-ray and Raman data suggest also the crystallization of Si nuclei at glass substrate–alumina interface, which would come from the soda-lime glass used as substrate.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2013.09.041