Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the te...

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Published in:Ceramics international 2014-03, Vol.40 (2), p.3785-3791
Main Authors: Boratto, Miguel Henrique, de Andrade Scalvi, Luis Vicente
Format: Article
Language:English
Subjects:
Alumina
Aluminum
Aluminum oxide
Annealing
Crystallization
Evaporation
Oxidation
Resistive evaporation
Silicon substrates
Temperature
Thermal annealing
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description Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for reasonable oxidation, which is accelerated up to 8 times for O2-rich atmosphere. Results of surface electrical resistivity and Raman spectroscopy are in good agreement with these findings. Surprisingly, X-ray and Raman data suggest also the crystallization of Si nuclei at glass substrate–alumina interface, which would come from the soda-lime glass used as substrate.
doi_str_mv 10.1016/j.ceramint.2013.09.041
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subjects Alumina
Aluminum
Aluminum oxide
Annealing
Crystallization
Evaporation
Oxidation
Resistive evaporation
Silicon substrates
Temperature
Thermal annealing
title Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer
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