Wide band gap characteristic of quaternary and flexible Mg and Ga co-doped ZnO transparent conductive thin films

Transparent conductive and flexible Mg and Ga co-doped ZnO (MGZO) thin films were prepared on poly-ethylene terephthalate (PET) by RF magnetron sputtering technique at room temperature. The effects of different working pressures on the structural, chemical, morphological, optical and electrical prop...

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Bibliographic Details
Published in:Journal of Asian Ceramic Societies 2013-09, Vol.1 (3), p.262-266
Main Authors: Shin, Seung Wook, Kim, In Young, Jeon, Ki Seok, Heo, Jae Yeong, Heo, Gi-Seok, Patil, P.S., Kim, Jin Hyeok, Lee, Jeong Yong
Format: Article
Language:English
Subjects:
Electrical resistivity
Energy gap
Flexible thin film
Magnesium
Magnesium oxide
Mg and Ga co-doped ZnO (MGZO)
Phases
Polyethylene terephthalates
RF magnetron sputtering
Thin films
Transparent conducting oxide (TCO)
Zinc oxide
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Summary:Transparent conductive and flexible Mg and Ga co-doped ZnO (MGZO) thin films were prepared on poly-ethylene terephthalate (PET) by RF magnetron sputtering technique at room temperature. The effects of different working pressures on the structural, chemical, morphological, optical and electrical properties of MGZO thin films were investigated. X-ray diffraction results indicate that all the MGZO thin films were grown as polycrystalline wurtzite structures without secondary phases such as MgO, Ga2O3, MgGa2O4, or ZnGa2O4. The MGZO thin film prepared at 6mTorr has the lowest value of full width at half maximum. A typical survey spectrum of all the MGZO thin films confirmed the presence of Mg, Ga, Zn and O. The MGZO thin film prepared at 6mTorr showed the widest optical band gap energy of 3.91eV and lowest electrical resistivity of 5.3×10−3Ωcm.
ISSN:2187-0764
2187-0764
DOI:10.1016/j.jascer.2013.06.003