Experimental shift allowance in the deconvolution of SIMS depth profiles

We study the deconvolution of the secondary ion mass spectrometry (SIMS) depth profiles of silicon and gallium arsenide structures with doped thin layers. Special attention is paid to allowance for the instrumental shift of experimental SIMS depth profiles. This effect is taken into account by using...

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Bibliographic Details
Published in:Surface and interface analysis 2013-08, Vol.45 (8), p.1228-1232
Main Authors: Yunin, Pavel Andreevich, Drozdov, Yurii Nikolaevich, Drozdov, Mikhail Nikolaevich
Format: Article
Language:English
Subjects:
Algorithms
Allowances
Computer simulation
Deconvolution
delta layers
Depth profiling
depth resolution function
Inverse problems
MRI model
Reproduction
Secondary ion mass spectrometry
SIMS depth profiling
TOF-SIMS
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Summary:We study the deconvolution of the secondary ion mass spectrometry (SIMS) depth profiles of silicon and gallium arsenide structures with doped thin layers. Special attention is paid to allowance for the instrumental shift of experimental SIMS depth profiles. This effect is taken into account by using Hofmann's mixing‐roughness‐information depth model to determine the depth resolution function. The ill‐posed inverse problem is solved in the Fourier space using the Tikhonov regularization method. The proposed deconvolution algorithm has been tested on various simulated and real structures. It is shown that the algorithm can improve the SIMS depth profiling relevancy and depth resolution. The implemented shift allowance method avoids significant systematic errors of determination of the near‐surface delta‐doped layer position. Copyright © 2013 John Wiley & Sons, Ltd.
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.5259