Investigation of structural, electrical and multiferroic properties of Co-doped Aurivillius Bi6Fe2Ti3O18 thin films

In this study, the structural, electrical and multiferroic properties of Bi6Fe2Ti3O18 and Bi6Fe1.5Co0.5Ti3O18−δ thin films were investigated. A chemical solution deposition method was used to prepare the thin films on Pt(111)/Ti/SiO2/Si(100) substrates. Both of the thin films crystallized with singl...

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Bibliographic Details
Published in:Ceramics international 2015-03, Vol.41 (2), p.3277-3282
Main Authors: Murugesan Raghavan, Chinnambedu, Won Kim, Jin, Ya Choi, Ji, Kim, Jong-Woo, Su Kim, Sang
Format: Article
Language:English
Subjects:
A. Sol–gel processes
Aurivillius compounds
C. Electrical properties
Ceramics
Density
Deposition
Ferroelectric materials
Ferromagnetic materials
Hysteresis loops
Leakage current
Multiferroic properties
Orientation
Thin films
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Summary:In this study, the structural, electrical and multiferroic properties of Bi6Fe2Ti3O18 and Bi6Fe1.5Co0.5Ti3O18−δ thin films were investigated. A chemical solution deposition method was used to prepare the thin films on Pt(111)/Ti/SiO2/Si(100) substrates. Both of the thin films crystallized with single phase Aurivillius orthorhombic structures were confirmed by means of X-ray diffraction and Raman spectroscopy studies. X-ray diffraction study further revealed Co2+-ion doping to have a significant influence on the orientation of the Bi6Fe2Ti3O18 thin film. Electrical studies revealed that the leakage current density of the Bi6Fe1.5Co0.5Ti3O18−δ thin film was about two orders of magnitude lower than that of the Bi6Fe2Ti3O18 thin film. An enhanced remnant polarization (2Pr) of 7.4μC/cm2 and a remnant magnetization (2Mr) of 0.97emu/cm3 was obtained for the Bi6Fe1.5Co0.5Ti3O18−δ thin film by measuring the ferroelectric and ferromagnetic hysteresis loops at room temperature.
ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2014.11.026