Threshold pump intensity effect on the refractive index changes in InGaN SQD: Internal constitution and size effects

In the present paper, internal composition and size-dependent threshold pump intensity effects on on-center impurity-related linear, third-order nonlinear and total refractive index changes are investigated in wurtzite (In,Ga)N/GaN unstrained spherical quantum dot. The calculation is performed withi...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2015-04, Vol.462, p.30-33
Main Authors: El Ghazi, Haddou, A John Peter
Format: Article
Language:English
Subjects:
Approximation
Condensed matter
Gallium nitrides
Indium gallium nitrides
InGaN
Pumps
Quantum dot
Refractive index
Refractive index changes
Refractivity
Threshold optical intensity
Thresholds
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Summary:In the present paper, internal composition and size-dependent threshold pump intensity effects on on-center impurity-related linear, third-order nonlinear and total refractive index changes are investigated in wurtzite (In,Ga)N/GaN unstrained spherical quantum dot. The calculation is performed within the framework of parabolic band and single band effective-mass approximations using a combination of Quantum Genetic Algorithm (QGA) and Hartree–Fock–Roothaan (HFR) method. According to the results obtained, (i) a significant red-shift (blue shift) is obtained as the dot size (potential barrier) increases and (ii) a threshold optical pump intensity depending strongly on the size and the internal composition is obtained which constitutes the limit between two behaviors.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2015.01.014