Threshold pump intensity effect on the refractive index changes in InGaN SQD: Internal constitution and size effects

In the present paper, internal composition and size-dependent threshold pump intensity effects on on-center impurity-related linear, third-order nonlinear and total refractive index changes are investigated in wurtzite (In,Ga)N/GaN unstrained spherical quantum dot. The calculation is performed withi...

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Published in:Physica. B, Condensed matter Condensed matter, 2015-04, Vol.462, p.30-33
Main Authors: El Ghazi, Haddou, A John Peter
Format: Article
Language:English
Subjects:
Approximation
Condensed matter
Gallium nitrides
Indium gallium nitrides
InGaN
Pumps
Quantum dot
Refractive index
Refractive index changes
Refractivity
Threshold optical intensity
Thresholds
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description In the present paper, internal composition and size-dependent threshold pump intensity effects on on-center impurity-related linear, third-order nonlinear and total refractive index changes are investigated in wurtzite (In,Ga)N/GaN unstrained spherical quantum dot. The calculation is performed within the framework of parabolic band and single band effective-mass approximations using a combination of Quantum Genetic Algorithm (QGA) and Hartree–Fock–Roothaan (HFR) method. According to the results obtained, (i) a significant red-shift (blue shift) is obtained as the dot size (potential barrier) increases and (ii) a threshold optical pump intensity depending strongly on the size and the internal composition is obtained which constitutes the limit between two behaviors.
doi_str_mv 10.1016/j.physb.2015.01.014
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subjects Approximation
Condensed matter
Gallium nitrides
Indium gallium nitrides
InGaN
Pumps
Quantum dot
Refractive index
Refractive index changes
Refractivity
Threshold optical intensity
Thresholds
title Threshold pump intensity effect on the refractive index changes in InGaN SQD: Internal constitution and size effects
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