Effects of Nitridation Temperature on Characteristics of Gallium Nitride Thin Films Prepared Via Two-Step Method

• Published in: Acta metallurgica sinica : English letters 2015-03, Vol.28 (3), p.362-366
• Main Authors: Fong, Chee Yong, Ng, Sha Shiong, Yam, Fong Kwong, Abu Hassan, Haslan, Hassan, Zainuriah
• Format: Article
• Language: English
• Subjects: Buffer layers; Catalysis; Characterization and Evaluation of Materials; Chemistry and Materials Science; Corrosion and Coatings; Deposition; Furnaces; Gallium nitrides; Gallium oxides; GaN薄膜; Grain size; Magnetron sputtering; Materials Science; Metallic Materials; Methods; Molecular beam epitaxy; Nanotechnology; Optical properties; Optimization; Organometallic Chemistry; Radiation; Radio frequencies; Sapphire; Spectroscopy/Spectrometry; Spectrum analysis; Substrates; Synthesis; Temperature; Thin films; Tribology; Wurtzite; 两步法; 制备; 射频磁控溅射法; 氮化温度; 氮化镓薄膜; 特性; 蓝宝石衬底
• ISSN: 1006-7191; 2194-1289
• DOI: 10.1007/s40195-015-0206-z

In this research,the growth of GaN thin films on c-plane sapphire（0001） substrates via two-step method without the assist of buffer layer and catalysts was demonstrated.First,gallium oxide（Ga_2O_3） thin films were deposited on sapphire substrates by radio frequency magnetron sputtering method.The deposited Ga_2O_3 thin films were then nitridated at various temperatures.In this research,attention is focused on the influence of nitridation temperatures on the structural and optical properties of the synthesized GaN thin films.It is revealed that 950 ℃ is the optimal nitridation temperature for synthesizing hexagonal wurtzite GaN thin film with preferential（0002） growth direction.