High Temperature Structural, Dielectric, and Ion Conduction Properties of Orthorhombic InVO4

Orthorhombic InVO4 was prepared by solid‐state reaction method and characterized by powder X‐ray diffraction and scanning electron microscopy. The frequency‐dependent dielectric and conductivity properties were studied from 300 to 973 K by impedance spectroscopy. A significantly enhanced conductivit...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2013-01, Vol.96 (1), p.166-173
Main Authors: Katari, Vasundhara, Patwe, Sadequa J., Achary, Srungarpu N., Tyagi, Avesh K.
Format: Article
Language:English
Subjects:
Amplitudes
Ceramics
Conduction heating
Dielectric constant
Dielectric properties
Dielectrics
Diffraction
Dispersions
Grain boundaries
Hopping conduction
Unit cell
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Summary:Orthorhombic InVO4 was prepared by solid‐state reaction method and characterized by powder X‐ray diffraction and scanning electron microscopy. The frequency‐dependent dielectric and conductivity properties were studied from 300 to 973 K by impedance spectroscopy. A significantly enhanced conductivity was observed at higher temperature whereas almost no conduction was observed below 723 K. Appreciable grain boundary conductivity was observed at higher temperature. The activation energies for grain and grain boundary conductivities are 0.87 and 1.28 eV, respectively. The relative permittivity of ~35 was observed in a wider range of frequencies and temperatures. The frequency dispersion dielectric studies indicated thermally activated hopping conduction process. The high temperature structural studies revealed no significant change in structural parameters except a gradual increasing trend in the unit cell parameters and amplitude of isotropic thermal parameters with increasing temperature.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1551-2916.2012.05447.x