Threshold voltage in junctionless nanowire transistors

This work presents a physically based analytical model for the threshold voltage in junctionless nanowire transistors (JNTs). The model is based on the solution of the two-dimensional Poisson equation and includes the dependence on JNT width, height and doping concentration. The quantum confinement...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor science and technology 2011-10, Vol.26 (10), p.105009-2
Main Authors: Trevisoli, Renan Doria, Doria, Rodrigo Trevisoli, de Souza, Michelly, Pavanello, Marcelo Antonio
Format: Article
Language:English
Subjects:
Applied sciences
Computer simulation
Electronics
Exact sciences and technology
Gates
Mathematical models
Molecular electronics, nanoelectronics
Nanowires
Oxides
Quantum confinement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Threshold voltage
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This work presents a physically based analytical model for the threshold voltage in junctionless nanowire transistors (JNTs). The model is based on the solution of the two-dimensional Poisson equation and includes the dependence on JNT width, height and doping concentration. The quantum confinement has also been taken into consideration in the model formulation. The model is validated using experimental results of nMOS and pMOS JNTs, and three-dimensional TCAD simulations where the nanowire width and height, doping concentration, gate oxide thickness and temperature have been varied. The gate oxide capacitance is also addressed aiming to adequately calculate the capacitance in non-planar devices. The temperature influence on the threshold voltage of JNTs is also analyzed. The presented model shows excellent agreement with both experimental and simulated data, adequately describing the JNT threshold voltage.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/26/10/105009