Time-resolved Bragg coherent X-ray diffraction revealing ultrafast lattice dynamics in nano-thickness crystal layer using X-ray free electron laser

Ultrafast time-resolved Bragg coherent X-ray diffraction (CXD) has been performed to investigate lattice dynamics in a thin crystal layer with a nanoscale thickness by using a SASE (Self-Amplified Spontaneous Emission)–XFEL (X-ray Free Electron Laser) facility, SACLA. Single-shot Bragg coherent diff...

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Bibliographic Details
Published in:Journal of the Ceramic Society of Japan 2013/03/01, Vol.121(1411), pp.283-286
Main Authors: TANAKA, Yoshihito, ITO, Kiminori, NAKATANI, Takashi, ONITSUKA, Rena, NEWTON, Marcus, SATO, Takahiro, TOGASHI, Tadashi, YABASHI, Makina, KAWAGUCHI, Tomoya, SHIMADA, Koki, TOKUDA, Kazuya, TAKAHASHI, Isao, ICHITSUBO, Tetsu, MATSUBARA, Eiichiro, NISHINO, Yoshinori
Format: Article
Language:English
Subjects:
Coherence
Coherent X-ray diffraction
Crystal lattices
Diffraction
Diffraction patterns
Free electron lasers
Nanocrystal
Nanomaterials
Nanostructure
Semiconductor
Time-resolved measurement
X-ray free electron laser
X-rays
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Summary:Ultrafast time-resolved Bragg coherent X-ray diffraction (CXD) has been performed to investigate lattice dynamics in a thin crystal layer with a nanoscale thickness by using a SASE (Self-Amplified Spontaneous Emission)–XFEL (X-ray Free Electron Laser) facility, SACLA. Single-shot Bragg coherent diffraction patterns of a 100 nm-thick silicon crystal were measured in the asymmetric configuration with a grazing exit using an area detector. The measured coherent diffraction patterns showed fringes extending in the surface normal direction. By using an optical femtosecond laser-pump and the XFEL-probe, a transient broadening of coherent diffraction pattern profile was observed at a delay time of around a few tens of picosecond, indicating transient crystal lattice fluctuation induced by the optical laser. A perspective application of the time-resolved Bragg CXD method to investigate small sized grains composing ceramic materials is discussed.
ISSN:1882-0743
1348-6535
DOI:10.2109/jcersj2.121.283